LED950-66-16100 technical data super high power infrared led structure: 16 power led chips, 4 x 4 parallel array peak wavelength: typ. 950 nm optical output power: typ. 750 mw cw @ 2.0 a package: to-66 with silicone + epoxy resin absolute maximum ratings (tc = 25c) characteristic symbol rating unit power dissipation p d 20 w dc forward current **) i f 2.2 a pulse forward current *) i fp - a reverse voltage v r 5 v operating lifetime t 50.000 h operating case temperature t op -30 .. +70 c storage temperature t stg -60 .. +85 c *) pulse width 10 s, f 500 hz optical-electrical characteristics (tc = 25c) characteristic symbol test condition min typ max unit radiant flux e (950 nm) i f = 1.4 a 500 550 600 mw radiant flux e (950 nm) i f = 2.0 a 700 750 800 mw luminous intensity i v (950 nm) i f = 1.4 a - - - cd forward voltage v f i f = 1.4 a 5.0 5.2 5.5 v reverse current i r v r = 5 v 10 a peak wavelength p i f = 1.4 a 940 950 960 nm spectrum half width ? i f = 1.4 a 30 nm emission angle fwhm ? i f = 1.4 a 60 important note for safe operation this high power led must be cooled! **) use a heat sink with a thermal resistance 8k/w. maximum uncooled allowed operation current 80 ma. do not view directly into the emi tting area of the led when in operation! roithner lasertechnik gmbh wiedner hauptstrasse 76, 1040 vienna, austria tel: +43 -1- 586 52 43-0 fax: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com 1 = anode 2 = cathode
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